Silicon controlled rectifier is General Electric's trade name for a type of thyristor. Silicon controlled rectifier or semiconductor-controlled rectifier is a four-layer solid state current-controlling device.
These SCRs will be widely used in electronic devices which have to control high voltage and power. It can also be applicable in medium and high AC power operations like motor control function.
SCR will be carried out when a gate pulse is applied to it, just like a diode. It will have four layers of semiconductors which form two structures namely; NPNP or PNPN. Additionally, it will have three junctions called as J1, J2 and J3 and three terminals (anode, cathode and a gate). Below is the diagrammatic representation of an SCR.
Anode will be connected to the P-type, cathode to the N-type and the gate to the P-type as shown in below figure.
In an SCR, necessary dopants will be infused to the intrinsic semiconductor which is silicon. But doping a PNPN junction will be depending on the SCR application.
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